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Scientists Dream Ultra-high Speed of Dynamic Random Access Memory

Researchers are trying to expand their basic knowledge about non – volatile memory. Material scientists are dreaming to create a non-volatile memory in which digital information will be kept without power. That memory should work at the same time with ultra-high speed of today’s Dynamic Random Access Memory (D-RAM).

A recent paper got published in Advanced Functional Materials journal. The researchers of that paper focused on why hafnium oxide based devices are long lasting for memory applications. It also dealt with how such materials can be made to perform at desired levels. This knowledge is very helpful in creating a base for the future mass application in all sorts of electronic devices.

Non – volatile memory saves information by modulation of electrical resistance of metal-insulator-metal structure. The high and low resistive states represent zero as well as one respectively, and information is not lost even when computer is switched – off.

By: Bhavna Sharma


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